dsPIC30F Flash Programming Specification
DS70102K-page 24
2010 Microchip Technology Inc.
TABLE 8-1:
PROGRAMMING EXECUTIVE COMMAND SET
Opcode
Mnemonic
Length
(16-bit
words)
Time Out
Description
0x0
SCHECK
1
1 ms
Sanity check.
0x1
READD
4
1 ms/row Read N 16-bit words of data EEPROM, Configuration registers or
device ID starting from specified address.
0x2
READP
4
1 ms/row Read N 24-bit instruction words of code memory starting from
specified address.
0x3
Reserved
N/A
This command is reserved. It will return a NACK.
0x4
PROGD(2)
19
5 ms
Program one row of data EEPROM at the specified address, then
verify.
0x5
PROGP(1)
51
5 ms
Program one row of code memory at the specified address, then
verify.
0x6
PROGC
4
5 ms
Write byte or 16-bit word to specified Configuration register.
0x7
ERASEB
2
5 ms
Bulk Erase (entire code memory or data EEPROM), or erase by
segment.
0x8
ERASED(2)
3
5 ms/row Erase rows of data EEPROM from specified address.
0x9
ERASEP(1)
3
5 ms/row Erase rows of code memory from specified address.
0xA
QBLANK
3
300 ms
Query if the code memory and data EEPROM are blank.
0xB
QVER
1
1 ms
Query the programming executive software version.
Note 1: One row of code memory consists of (32) 24-bit words. Refer to Table 5-2 for device-specific information.
2: One row of data EEPROM consists of (16) 16-bit words. Refer to Table 5-3 for device-specific information.
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